Enhanced E-field sensing using negative capacitance FET subthreshold slope enhancement
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United States of America Patent
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Feb 18, 2014
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Jun 23, 2011
app pub date -
Dec 17, 2010
filing date -
Dec 18, 2009
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Abstract
In certain embodiments, a field effect transistor (FET) can include a substrate, a source electrode, a drain electrode, a ferroelectric material layer, a first gate electrode, and a second gate electrode to maintain an optimal polarization state of the ferroelectric material layer. In other embodiments, a FET can include a film, first and second gates on the film, a ferroelectric material layer covering the film and gates, an insulating layer substantially covering the ferroelectric material layer, a source and a drain on the insulating layer, and a pentacene layer.
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