Method for depositing an amorphous silicon film for photovoltaic devices with reduced light-induced degradation for improved stabilized performance
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United States of America Patent
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Feb 18, 2014
Grant Date -
Aug 4, 2011
app pub date -
Aug 26, 2009
filing date -
Aug 29, 2008
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Abstract
A thin film photovoltaic device on a substrate is being realized by a method for manufacturing a p-i-n junction semiconductor layer stack with a p-type microcrystalline silicon layer, a p-type amorphous silicon layer, a buffer silicon layer comprising preferably intrinsic amorphous silicon, an intrinsic type amorphous silicon layer, and an n-type silicon layer over the intrinsic type amorphous silicon layer.
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