Method for manufacturing silicon carbide semiconductor device and the silicon carbide semiconductor device
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United States of America Patent
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Feb 11, 2014
Grant Date -
Oct 18, 2012
app pub date -
Jun 25, 2012
filing date -
Dec 1, 2008
priority date (Note) -
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Abstract
Silicon carbide semiconductor device includes trench, in which connecting trench section is connected to straight trench section. Straight trench section includes first straight trench and second straight trench extending in parallel to each other. Connecting trench section includes first connecting trench perpendicular to straight trench section, second connecting trench that connects first straight trench and first connecting trench to each other, and third connecting trench that connects second straight trench and first connecting trench to each other. Second connecting trench extends at 30 degrees of angle with the extension of first straight trench. Third connecting trench extends at 30 degrees of angle with the extension of second straight trench. A manufacturing method according to the invention for manufacturing a silicon carbide semiconductor device facilitates preventing defects from being causes in a silicon carbide semiconductor device during the manufacture thereof.
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