Method for fabrication of layered heterojunction polymeric devices

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United States of America Patent

PATENT NO 8648336
APP PUB NO 20120056167A1
SERIAL NO

13254847

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Abstract

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Method for growing multilayer polymer based hetexjunction devices which uses selective breaking of C—H or Si—H bonds without breaking other bonds leading to fast curing for the production of layered polymer devices having polymer heterojunctions deposited by the common solution-based deposition methods.

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Patent OwnerAddress
FOSHAN QIAOLUAN TECHNOLOGY CO LTDROOM 101 201 301 401 2ND FLOOR BUILDING 10 SHENGYUE GARDEN NO 33 SHUNYE EAST ROAD XINGTAN TOWN SHUNDE DISTRICT FOSHAN CITY GUANGDONG PROVINCE 528325 FOSHAN CITY GUANGDONG PROVINCE 528325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lau, Leo W M London, CA 6 44
Nie, Heng Yong London, CA 2 10
Trebicky, Tomas London, CA 3 24

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