Method of forming an interconnect on a semiconductor substrate
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United States of America Patent
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Feb 11, 2014
Grant Date -
Sep 24, 2009
app pub date -
Nov 8, 2007
filing date -
Nov 8, 2007
priority date (Note) -
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Abstract
The present invention relates to a method of forming a wire bond-free conductive interconnect area on a semiconductor substrate. A semiconductor substrate with an electrically conductive protrusion, defining a bond pad, is provided as well as a plurality of carbon nanotubes. The plurality of carbon nanotubes is immobilized on the bond pad by allowing at least one random portion along the length of the carbon nanotubes to attach to the surface of the bond pad. Thus an aggregate of loops of carbon nanotubes is formed on the surface of the bond pad. Thereby a conductive interconnect area is formed on the electrically conductive protrusion without heat treatment.
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