Method of forming insulation film using plasma treatment cycles

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United States of America Patent

PATENT NO 8647722
APP PUB NO 20100124618A1
SERIAL NO

12618419

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Abstract

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A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma.

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Patent Owner(s)

Patent OwnerAddress
ASM JAPAN K K23-1 6-CHOME NAGAYAMA TAMA-SHI TOKYO 206-0025

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukazawa, Atsuki Tama, JP 98 37777
Hong, Kuo-wei Tokyo, JP 5 4702
Kobayashi, Akiko Tokyo, JP 33 5918
Kobayashi, Nobuyoshi Tokyo, JP 66 5039
Shimizu, Akira Tokyo, JP 339 17880

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