Double trench rectifier
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United States of America Patent
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Feb 4, 2014
Grant Date -
Sep 6, 2012
app pub date -
Feb 27, 2012
filing date -
Sep 23, 2009
priority date (Note) -
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Abstract
A high power density or low forward voltage rectifier which utilizes at least one trench in both the anode and cathode. The trenches are formed in opposing surfaces of the substrate, to increase the junction surface area per unit surface area of the semiconductor die. This structure allows for increased current loads without increased horizontal die space. The increased current handling capability allows for the rectifier to operate at lower forward voltages. Furthermore, the present structure provides for increased substrate usage by up to 30 percent.
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