Substantially L-shaped silicide for contact
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United States of America Patent
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Feb 4, 2014
Grant Date -
Nov 20, 2008
app pub date -
Jul 30, 2008
filing date -
May 18, 2006
priority date (Note) -
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Abstract
A structure for a semiconductor device, according to an embodiment, includes: a substantially L-shaped silicide element including a base member and an extended member, wherein the base member extends at least partially into a shallow trench isolation (STI) region such that a substantially horizontal surface of the base member directly contacts a substantially horizontal surface of the STI region; and a contact contacting the substantially L-shaped silicide element.
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