Semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8643106
APP PUB NO 20090250755A1
SERIAL NO

12308846

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Abstract

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A transistor capable of adjusting a threshold value is obtained by adjusting an impurity concentration of a silicon substrate supporting an SOI layer and by controlling a thickness of a buried insulating layer formed on a surface of the silicon substrate in contact with the SOI layer.

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Patent Owner(s)

Patent OwnerAddress
FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCETSUKUBA
NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY1-1 KATAHIRA 2-CHOME AOBA-KU SENDAI-SHI MIYAGI 980-8577

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ohmi, Tadahiro Miyagi, JP 798 14083
Teramoto, Akinobu Miyagi, JP 114 811
Weitao, Cheng Miyagi, JP 1 0

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