Single-polycrystalline silicon electrically erasable and programmable memory device of varied gate oxide thickness, using PIP or MIM coupling capacitor for cell size reduction and simultaneous VPP and VNN for write voltage reduction
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United States of America Patent
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Jan 21, 2014
Grant Date -
Sep 29, 2011
app pub date -
Mar 19, 2011
filing date -
Mar 25, 2010
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Abstract
A single polycrystalline silicon floating gate nonvolatile memory device has a storage MOS transistor and at least one polycrystalline-insulator-polycrystalline (PIP) or metal-insulator-metal (MIM) capacitor manufactured with dimensions that can be fabricated using current low voltage logic integrated circuit process. The PIP or MIM capacitor is a coupling capacitor with a first plate connected to a floating gate of the storage MOS transistor to form a floating gate node. The coupling PIP or MIM capacitor couples the voltage level applied to a second plate of the PIP or MIM capacitor to the floating gate node with a large coupling ratio approximately 90% so as to initiate Fowler-Nordheim tunneling effect for erasing or programming the memory device. The memory device may also have another PIP or MIM capacitor with a first plate connected to the floating gate of the storage MOS transistor for serving as a tunneling capacitor.
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