High frequency field-effect transistor
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United States of America Patent
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Jan 14, 2014
Grant Date -
Feb 3, 2011
app pub date -
Apr 15, 2009
filing date -
Apr 15, 2008
priority date (Note) -
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Abstract
The invention relates to a field-effect transistor having a higher efficiency than the known field-effect transistors, in particular at higher operating frequencies. This is achieved by electrically connecting sources of a plurality of main current paths by means of a strap line (SL) being inductively coupled to a gate line (Gtl) and/or a drain line (Drnl) for forming an additional RF-return current path parallel to the RF-return current path in a semiconductor body (SB). The invention further relates to a field-effect transistor package, a power amplifier, a multi-stage power amplifier and a base station comprising such a field-effect transistor.
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