Detection device comprising a rugged test with dual transistor
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United States of America Patent
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Jan 14, 2014
Grant Date -
Jun 7, 2012
app pub date -
Dec 7, 2011
filing date -
Dec 7, 2010
priority date (Note) -
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Abstract
The detection device comprises a photodetector provided with first and second terminals. A readout circuit has an input coupled to the first terminal of the photodetector. A bias circuit imposes a bias on the terminals of the photodetector. A test circuit delivers a test current to the photodetector. The test circuit comprises a first transistor through which the test current flows. The first transistor presents a first main electrode connected to the input of the readout circuit and configured so as to have a junction diode opposing flow of the charge carriers when the photodetector is short-circuited.
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