Method of producing silicon wafer, epitaxial wafer and solid state image sensor, and device for producing silicon wafer
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United States of America Patent
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Feb 25, 2014
Grant Date -
Aug 4, 2011
app pub date -
Jan 28, 2011
filing date -
Jan 28, 2011
priority date (Note) -
Withdrawn
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Abstract
An object of the present invention is to provide a method of producing a silicon wafer and a method of producing an epitaxial wafer, which enable easily forming a gettering site in a relatively short period of time and effectively suppressing occurrence of dislocation induced by internal stresses. Specifically, the present invention provides a method of producing a silicon wafer, comprising: irradiating a first laser beam having a relatively long wavelength and a second laser beam having a relatively short wavelength onto a portion of a silicon wafer located at a predetermined depth measured from a surface of the silicon wafer, wherein the first laser beam is concentrated at a portion located at a predetermined depth of the wafer to form a process-affected layer for gettering heavy metals thereat, the second laser beam is concentrated at a beam-concentration portion in the vicinity of the surface of the wafer to melt the beam-concentration portion, the beam-concentration portion is then recrystallized.
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