Non-volatile memory cell structure and a method of fabricating the same
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United States of America Patent
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Jan 14, 2014
Grant Date -
Jul 19, 2012
app pub date -
Jan 18, 2011
filing date -
Jan 18, 2011
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Abstract
A non-volatile memory cell structure and a method of fabricating the same. The method comprising the steps of: fabricating a portion of a floating gate from one or more first metal local interconnection layer (LIL) slit contacts deposited on a patterned dielectric layer; and fabricating a portion of a control gate from one or more second metal LIL slit contacts deposited on the patterned dielectric layer; wherein the first and second metal LIL slit contacts form a capacitive structure between the floating gate and the control gate.
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