Optical semiconductor device
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United States of America Patent
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Jan 7, 2014
Grant Date -
Jul 28, 2011
app pub date -
Jul 30, 2009
filing date -
Oct 1, 2008
priority date (Note) -
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Abstract
The present invention is an optical semiconductor device including a lower clad layer 12 having a first conduction type, an active layer 14 that is provided on the lower clad layer 12 and has multiple quantum dot layers 51-55 having multiple quantum dots 41, and an upper clad layer 18 that is provided on the active layer 14 and has a second conduction type opposite to the first conduction type, the multiple quantum dot layers 51-55 having different quantum dot densities.
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