Method and system for increasing alignment target contrast
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United States of America Patent
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Jan 7, 2014
Grant Date -
Mar 31, 2011
app pub date -
Mar 24, 2010
filing date -
Apr 10, 2009
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Abstract
A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.
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