Graphite material and method for manufacturing the same
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United States of America Patent
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Jan 7, 2014
Grant Date -
Jan 14, 2010
app pub date -
Dec 21, 2007
filing date -
Dec 22, 2006
priority date (Note) -
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Abstract
Provided are a graphite material, which has excellent bonding characteristics to semiconductor and efficiently dissipates heat generated from the semiconductor, and a method for manufacturing such material. The graphite material is provided by adding at least two kinds of elements selected from among silicon, zirconium, calcium, titanium, chromium, manganese, iron, cobalt, nickel, calcium, yttrium, niobium, molybdenum, technetium, ruthenium and compounds containing such elements, and by performing heat treatment. The graphite material is characterized in having a thickness of the 112 face of the graphite crystal of 15 nm or more by X-ray diffraction, and an average heat conductivity of 250 W/(m·K) or more in the three directions of the X, Y and Z axes.
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