Semiconductor device manufacture method and semiconductor device
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United States of America Patent
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Dec 24, 2013
Grant Date -
Jan 5, 2012
app pub date -
Feb 11, 2011
filing date -
Jun 30, 2010
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Abstract
A semiconductor device manufacture method includes: forming an insulating film above a semiconductor substrate; etching the insulating film to form a dummy groove having a first depth, a wiring groove having a second depth deeper than the first depth, and a via hole to be disposed on a bottom of the wiring groove; depositing a conductive material in the dummy groove, wiring groove and via hole and above the insulating film; and polishing and removing the conductive material above the insulating film.
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