Through substrate via formation processing using sacrificial material
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United States of America Patent
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Dec 24, 2013
Grant Date -
Jun 20, 2013
app pub date -
Dec 14, 2011
filing date -
Dec 14, 2011
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Abstract
A method is provided for establishing through substrate vias (TSVs) within a substrate. The method includes: forming at least one recess in a front-side of a wafer; filling, at least partially, the at least one recess with a sacrificial material from the front-side of the wafer; thinning the wafer from a back-side to reveal the at least one recess at least partially filled with the sacrificial material; removing from the back-side of the wafer the sacrificial material from the at least one recess; and filling the at least one recess from the back-side of the wafer with a conductive material to provide the at least one through substrate via.
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