Semiconductor light-emitting element and method for manufacturing semiconductor light-emitting element
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United States of America Patent
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Dec 17, 2013
Grant Date -
Sep 13, 2012
app pub date -
Mar 8, 2012
filing date -
Mar 10, 2011
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Abstract
There is provided a light-emitting element having a semiconductor film which includes a p-type current-spreading layer of GaInP or GaP; a first p-clad of AlInP; a second p-clad of AlGaInP; an active layer including of GaInP or AlGaInP; a first n-clad having a carrier density of 1×1018 cm−3 to 5×1018 cm−3; a second n-clad having a carrier density of 1×1018 cm−3 to 5×1018 cm−3; wherein the thickness proportion of the first p-clad in an entire p-clad, is 50% to 80%; the thickness of an entire n-clad is equal to or greater than 2 μm; the thickness proportion of the first n-clad in the entire n-clad is equal to or greater than 80%; and the thickness of the second n-clad is equal to or greater than 100 nm.
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