Method and system for non-destructive distribution profiling of an element in a film
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United States of America Patent
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Dec 17, 2013
Grant Date -
Dec 20, 2012
app pub date -
Aug 23, 2012
filing date -
Jul 11, 2005
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Abstract
A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.
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