Low-energy, hydrogen-free method of diamond synthesis

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United States of America Patent

PATENT NO 8608850
SERIAL NO

12689224

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Diamond thin films were deposited on copper substrate by the Vapor Solid (VS) deposition method using a mixture of fullerene C60 and graphite as the source material. The deposition took place only when the substrate was kept in a narrow temperature range of approximately 550-650° C. Temperatures below and above this range results in the deposition of fullerenes and other carbon compounds, respectively.

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PUERTO RICO UNIVERSITY OF1187 FLAMBOYAN STREET BOTANICAL GARDENS SOUTH SAN JUAN 00926-1117

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Makarov, Vladimir San Juan, US 47 483
Morell, Gerardo Guaynabo, US 6 15
Varshney, Deepak San Juan, US 8 19
Weiner, Brad R Dorado, US 4 10

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