Atomic layer deposition apparatus and atomic layer deposition method
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United States of America Patent
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Dec 17, 2013
Grant Date -
Dec 23, 2010
app pub date -
Feb 17, 2009
filing date -
Feb 18, 2008
priority date (Note) -
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Abstract
An atomic layer deposition apparatus includes: a first chamber which is surrounded by walls including a supply hole for the reactive gas formed thereon; a second chamber which is surrounded by walls including a supply hole for a source gas formed thereon; an antenna array which is provided in the first chamber, the antenna array having a plurality of rod-shaped antenna elements provided in parallel respectively to produce the plasma using the reactive gas; a substrate stage which is provided in the second chamber, the substrate being placed on the substrate stage; and a connecting member which connects the first chamber and the second chamber to supply gas containing reactive gas radical from the first chamber to the second chamber, the reactive gas radical being produced using the antenna array.
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