Bucket-type ion source for fanning cusped magnetic fields inside a plasma generation chamber
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United States of America Patent
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Dec 10, 2013
Grant Date -
Sep 13, 2012
app pub date -
Mar 9, 2012
filing date -
Mar 10, 2011
priority date (Note) -
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Abstract
An ion source includes a plasma generation chamber, at least one filament disposed inside the plasma generation chamber, at least one electrode disposed so as to be opposed to the plasma generation chamber, and configured to extract out an ion beam from the plasma generation chamber, and a plurality of permanent magnets disposed outside the plasma generation chamber, and configured to form cusped magnetic fields inside the plasma generation chamber, and a deposition preventive plate disposed parallel with an inner surface of a wall of the plasma generation chamber. The deposition preventive plate has recesses which are formed at such positions as to be opposed to the respective permanent magnets with the wall of the plasma generation chamber interposed in between.
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