Method for improving internal quantum efficiency of group-III nitride-based light emitting device
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United States of America Patent
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Dec 3, 2013
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Apr 21, 2011
app pub date -
Oct 20, 2009
filing date -
Oct 20, 2009
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Abstract
A method for improving internal quantum efficiency of a group-III nitride-based light emitting device is disclosed. The method includes the steps of: providing a group-III nitride-based substrate having a single crystalline structure; forming on the group-III nitride-based substrate an oxide layer, having a plurality of particles, without absorption of visible light, size, shape, and density of the particles are controlled by reaction concentration ratio of nitrogen/hydrogen, reaction time and reaction temperature; and growing a group-III nitride-based layer over the oxide layer; wherein the oxide layer prevents threading dislocation of the group-III nitride-based substrate from propagating into the group-III nitride-based layer, thereby improving internal quantum efficiency of the group-III nitride-based light emitting device.
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