Method of bonding semiconductor substrate and MEMS device

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United States of America Patent

PATENT NO 8592285
SERIAL NO

13513055

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Abstract

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A method of bonding a semiconductor substrate has a step of pressurizing and heating to bond a substrate 11 with a substrate 12 by eutectic bonding in a state that an aluminum containing layer 31 and a germanium layer 32 between a bonding section 30a of the substrate 11 and a bonding section 30b of the substrate 21 are overlaid and an outer end 32a of the germanium layer 32 is receded inward with respect to an outer end 31a of the aluminum containing layer 31.

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Patent Owner(s)

Patent OwnerAddress
PIONEER CORPORATIONTOKYO 113-0021
PIONEER MICRO TECHNOLOGY CORPORATIONNO 465 OHSATO-CHO KOUFU-SHI YAMANASHI

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishimori, Masahiro Yamanashi, JP 18 179
Noda, Naoki Yamanashi, JP 11 378
Yokouchi, Toshio Yamanashi, JP 4 26

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  • 2 Citation Count
  • H01L Class
  • 4.91 % this patent is cited more than
  • 12 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges4074140169277539225214911984534318001 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0250500750100012501500175020002250250027503000325035003750400042504500

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