Fabrication method and fabrication apparatus for fabricating metal oxide thin film

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United States of America Patent

PATENT NO 8591991
APP PUB NO 20100166958A1
SERIAL NO

12600665

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Abstract

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A fabrication method for fabricating a metal oxide film introduces H2 gas and O2 gas or, H2O2 gas, into a catalytic reactor to make contact with a catalyst to generate H2O gas. The H2O gas that is generated is jetted from the catalytic reactor to react with a metal compound gas, to thereby deposit the metal oxide thin film on a substrate and fabricate the metal oxide thin film.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 107-6325
NATIONAL UNIVERSITY CORPORATION NAGAOKA UNIVERSITY OF TECHNOLOGY1603-1 KAMITOMIOKA-MACHI NAGAOKA-SHI NIIGATA-KEN 940-2188

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Inoue, Yasunobu Nagaoka, JP 64 135
Nishiyama, Hiroshi Nagaoka, JP 80 716
Takata, Masasuke Nagaoka, JP 1 0
Tsukichi, Masatoshi Chiba, JP 1 0
Yasui, Kanji Nagaoka, JP 5 12

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