Chemical mechanical polishing slurry composition for polishing phase-change memory device and method for polishing phase-change memory device using the same
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United States of America Patent
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Nov 19, 2013
Grant Date -
Dec 3, 2009
app pub date -
Aug 13, 2009
filing date -
Jun 29, 2007
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Abstract
A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.
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