Ion implantation with molecular ions containing phosphorus and arsenic
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 19, 2013
Grant Date -
May 29, 2008
app pub date -
Nov 5, 2007
filing date -
Nov 6, 2006
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An ion implantation device and a method of manufacturing a semiconductor device is described, wherein ionized phosphorus-containing molecular clusters are implanted to form N-type transistor structures. The clusters are implanted to provide N-type doping for Source and Drain structures and Pocket or Halo formation, and for counter-doping Poly gates. These doping steps are critical to the formation of NMOS transistors. The molecular cluster ions have the chemical form AnHx+, or AnRHx+, where n and x are integers with 4
Recipient Email Address Recipient Email Address Comment Recipient Email Address To add this patent to one, or more, of
your portfolios, simply click the add button. This Patent is in these Portfolios: Add to additional portfolios: Last Refreshed On:
Changes done successfully
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Add to Portfolio(s)
