Semiconductor device having cylindrical lower electrode of capacitor and manufacturing method thereof
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United States of America Patent
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Nov 12, 2013
Grant Date -
Feb 7, 2013
app pub date -
Feb 6, 2012
filing date -
Dec 24, 2008
priority date (Note) -
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Abstract
To provide a semiconductor device including: plural capacitors each including a cylindrical lower electrode having an internal wall and an external wall, and an upper electrode that covers the external wall of the lower electrode via a capacitance dielectric film; and a supporting film having a buried portion buried in an internal region surrounded by the internal wall of the lower electrode, and a supporting portion a part of which is positioned within the internal region and remaining parts of which are positioned at outside of the internal region. The supporting portion sandwiches an upper end of the lower electrode at both ends of the upper end by covering the internal wall and the external wall of the upper end of the lower electrode.
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