Method of fabricating high-mobility dual channel material based on SOI substrate
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United States of America Patent
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Nov 12, 2013
Grant Date -
Jan 31, 2013
app pub date -
Jul 25, 2011
filing date -
Jun 8, 2011
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Abstract
The present invention discloses a method of fabricating high-mobility dual channel material based on SOI substrate, wherein compressive strained SiGe is epitaxially grown on a conventional SOI substrate to be used as channel material of PMOSFET; Si is then epitaixally grown on SiGe, and approaches such as ion implantation and annealing are employed to allow relaxation of part of strained SiGe and transfer strain to the Si layer thereon so as to form strained Si material as channel material of NMOSFET. With simple process and easy realization, this method can provide high-mobility channel material for NMOSFET and PMOSFET at the same time, well meeting the requirement of simultaneously enhancing the performance of NMOSFET and PMOSFET devices and therefore providing potential channel material for CMOS process of the next generation.
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