Metal deposition using seed layers

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United States of America Patent

PATENT NO 8580100
APP PUB NO 20120217165A1
SERIAL NO

12932372

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Abstract

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Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.

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Patent Owner(s)

Patent OwnerAddress
MASSACHUSETTS INSTITUTE OF TECHNOLOGY77 MASSACHUSETTS AVENUE CAMBRIDGE MA 02139

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bo, Yu Chesnut Hill, US 5 39
Chen, Gang Carlisle, US 944 8640
Chen, Shuo Newton, US 126 1209
Feng, Hsien-Ping Watertown, US 16 116
Poudel, Bed Newtonville, US 16 177
Ren, Zhifeng Newton, US 102 1982

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