Contact formation method, semiconductor device manufacturing method, and semiconductor device

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United States of America Patent

PATENT NO 8575023
APP PUB NO 20110198702A1
SERIAL NO

13126249

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Abstract

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A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided.

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Patent Owner(s)

Patent OwnerAddress
FOUNDATION FOR ADVANCEMENT OF INTERNATIONAL SCIENCE586-9 USHIGAFUCHI AKATSUKA TSUKUBA-CITY IBARAKI PREFECTURE 305-0062
NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY1-1 KATAHIRA 2-CHOME AOBA-KU SENDAI-SHI MIYAGI 9808577

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Isogai, Tatsunori Sendai, JP 37 111
Ohmi, Tadahiro Sendai, JP 798 14083
Tanaka, Hiroaki Sendai, JP 532 5487
Teramoto, Akinobu Sendai, JP 114 811

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