HBT with emitter electrode having planar side walls

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United States of America Patent

PATENT NO 8574994
SERIAL NO

12910213

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Abstract

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A heterojunction bipolar transistor is formed with an emitter electrode that comprises an emitter epitaxy underlying an emitter metal cap and that has horizontal dimensions that are substantially equal to the emitter metal cap.

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Patent Owner(s)

Patent OwnerAddress
HRL LABORATORIES LLC3011 MALIBU CANYON ROAD MALIBU CA 90265-4799

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fields, Charles H Calabasas, US 8 16

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