Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot
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United States of America Patent
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Nov 5, 2013
Grant Date -
Apr 9, 2009
app pub date -
Oct 2, 2008
filing date -
Oct 4, 2007
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Abstract
The present invention relates to a method for manufacturing an ultra low defect semiconductor single crystalline ingot, which uses a Czochralski process for growing a semiconductor single crystalline ingot through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and slowly pulling up the seed while rotating the seed, wherein a defect-free margin is controlled by increasing or decreasing a heat space on a surface of the semiconductor melt according to change in length of the single crystalline ingot as progress of the single crystalline ingot growth process.
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