Method for mapping oxygen concentration
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United States of America Patent
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Oct 29, 2013
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Jun 20, 2013
app pub date -
Aug 30, 2011
filing date -
Sep 2, 2010
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Abstract
A method for determining the oxygen concentration of a sample made of a semiconductor material includes a heat treatment step of the sample to form thermal donors, the measurement of the resistivity in an area of the sample, the determination of the thermal donor concentration from a relation expressing the charge carrier mobility according to an ionized dopant impurity concentration, by adding to the dopant impurity concentration four times the thermal donor concentration, and from the measured resistivity value. The method finally includes determining the oxygen concentration from the thermal donor concentration.
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