Method of fabricating an integrated device
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United States of America Patent
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Oct 29, 2013
Grant Date -
Feb 7, 2013
app pub date -
Oct 10, 2012
filing date -
Dec 16, 2008
priority date (Note) -
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Abstract
A method of fabricating an integrated device including a MicroElectroMechanical system (MEMS) and an associated microcircuit is provided. In one embodiment, the method comprises: forming a high temperature contact through a dielectric layer to an underlying element of a microcircuit formed adjacent to a MicroElectroMechanical System (MEMS) structure on a substrate; and depositing a layer of conducting material over the dielectric layer, and patterning the layer of conducting material to form a local interconnect (LI) for the microcircuit overlying and electrically coupled to the contact and a bottom electrode for the adjacent MEMS structure. Other embodiments are also provided.
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