Very low pressure high power impulse triggered magnetron sputtering

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United States of America Patent

PATENT NO 8568572
APP PUB NO 20100264016A1
SERIAL NO

12797829

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Abstract

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A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

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Patent Owner(s)

Patent OwnerAddress
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA1111 FRANKLIN STREET OAKLAND CA 94607-5200

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Anders, Andre El Cerrito, US 18 383
Andersson, Joakim Berkeley, US 18 100

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