Method for growing single crystal of group III metal nitride and reaction vessel for use in same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8568532
APP PUB NO 20120137961A1
SERIAL NO

13315871

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Abstract

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Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall.

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Patent Owner(s)

Patent OwnerAddress
NGK INSULATORS LTD2-56 SUDA-CHO MIZUHO-KU NAGOYA-SHI AICHI-PREFECTURE 467-8530
MIYOSHI NAOYA2-5-21-206 UCHI-HONMACHI SUITA-SHI OSAKA 564-0032
KITAOKA YASUO3-5-B-604 HIGASHI-OHDA IBARAKI-SHI OSAKA 567-0012
MORI YUSUKE8-16-9 KISAICHI KATANO-SHI OSAKA 576-0033

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Higashihara, Shuhei Nagoya, JP 18 52
Iwai, Makoto Kasugai, JP 118 504
Kitaoka, Yasuo Ibaraki, JP 97 1214
Miyoshi, Naoya Suita, JP 32 52
Mori, Yusuke Katano, JP 205 925

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