Pin diode
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United States of America Patent
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Oct 22, 2013
Grant Date -
Nov 29, 2012
app pub date -
Feb 16, 2010
filing date -
Feb 16, 2010
priority date (Note) -
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Abstract
A PIN diode having improved avalanche resistance is provided. The PIN diode includes: a semiconductor substrate 11 that includes an N+ semiconductor layer 1, and an N− semiconductor layer 2; a P-type anode region 15 that is formed by selective impurity diffusion into an outer surface of the N− semiconductor layer 2; and an anode electrode 17 that is conducted to the anode region 15 through a contact region 17c in the anode region 15. The anode region 15 has a substantially rectangular outer edge of which four sides are adapted to be linear parts B2 and four vertices are adapted to be curved parts B1, and outside the contact region 17c, N-type non-diffusion corner regions 16 that extend along the curved parts B1 are respectively formed.
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