EEPROM cell structure and a method of fabricating the same
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United States of America Patent
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Oct 22, 2013
Grant Date -
Jul 19, 2012
app pub date -
Jan 13, 2011
filing date -
Jan 13, 2011
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Abstract
An electrically erasable programmable read only memory (EEPROM) cell structure and a method of fabricating the same. The EEPROM cell comprising a substrate comprising two shallow trench isolation (STI) structures separated by a substrate portion; an intermediate patterned layer formed on the substrate such that the patterned layer covers respective portions of each STI structure; a floating gate bridging between the STI structures such that the floating gate extends over the intermediate patterned layer; a dielectric layer formed over the floating gate; and a control gate formed over the dielectric layer.
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