Micromechanical device including N-type doping for providing temperature compensation and method of designing thereof
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United States of America Patent
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Oct 15, 2013
Grant Date -
Nov 15, 2012
app pub date -
May 10, 2012
filing date -
May 13, 2011
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Abstract
The invention relates to a micromechanical device comprising a semiconductor element capable of deflecting or resonating and comprising at least two regions having different material properties and drive or sense means functionally coupled to said semiconductor element. According to the invention, at least one of said regions comprises one or more n-type doping agents, and the relative volumes, doping concentrations, doping agents and/or crystal orientations of the regions being configured so that the temperature sensitivities of the generalized stiffness are opposite in sign at least at one temperature for the regions, and the overall temperature drift of the generalized stiffness of the semiconductor element is 50 ppm or less on a temperature range of 100° C. The device can be a resonator. Also a method of designing the device is disclosed.
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