High frequency switch

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United States of America Patent

PATENT NO 8558639
APP PUB NO 20110163792A1
SERIAL NO

13062826

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Abstract

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Provided is a high frequency switch wherein first switch circuits, each of which includes a first PIN diode, are connected in parallel to one or more first λ/4 signal transmitting paths which transmit transmitting signals, and second switch circuits, each of which includes a second PIN diode, are connected in parallel to one or more second λ/4 signal transmitting paths which transmit receiving signals to a receiving terminal. A first control voltage is applied to the cathode of the first PIN diode, and a second control voltage is applied to the cathode of the second PIN diode. Furthermore, a biasing circuit which applies a constant bias voltage is connected to each anode of the first PIN diode and the second PIN diode.

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Patent Owner(s)

Patent OwnerAddress
SOSHIN ELECTRIC CO LTDNAGANO NAGANO

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ando, Akira Urayasu, JP 116 1114

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