Ambit light sensor with function of IR sensing

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United States of America Patent

PATENT NO 8558177
APP PUB NO 20110108728A1
SERIAL NO

12696026

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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An ambit light sensor with a function of IR sensing and a method of fabricating the same are provided. The ambit light sensor includes a substrate, an ambit light sensing structure, an infrared ray (IR) sensing structure, and a dielectric layer. The ambit light sensing structure is located over the substrate for sensing and filtering visible light. The IR sensing structure is located in the substrate under the ambit light sensing structure for sensing IR. The dielectric layer is located between the ambit light sensing structure and the IR sensing structure.

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Patent Owner(s)

Patent OwnerAddress
POWERCHIP SEMICONDUCTOR MANUFACTURING CORPORATIONHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Jin-Wei Taoyuan County, TW 4 24
Chen, Yu-Hsien Kaohsiung, TW 28 102
Hsu, Jen-Yao Hsinchu County, TW 7 98
Wang, Hong-Xian Hsinchu, TW 2 15

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