Method for reducing dielectric constant of film using direct plasma of hydrogen
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United States of America Patent
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Oct 8, 2013
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Jan 31, 2013
app pub date -
Jul 27, 2011
filing date -
Jul 27, 2011
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Abstract
A method for reducing a dielectric constant of a film includes (i) forming a dielectric film on a substrate; (ii) treating a surface of the film without film formation, and (III) curing the film. Step (i) includes providing a dielectric film containing a porous matrix and a porogen on a substrate, step (ii) includes, prior to or subsequent to step (iii), treating the dielectric film with charged species of hydrogen generated by capacitively-coupled plasma without film deposition to reduce a dielectric constant of the dielectric film, and step (iii) includes UV-curing the dielectric film to remove at least partially the porogen from the film.
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