Method of producing group II-VI compound semiconductor, method of producing group II-VI compound semiconductor phosphor, and hexagonal group II-VI compound semiconductor
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United States of America Patent
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Oct 8, 2013
Grant Date -
Dec 23, 2010
app pub date -
Feb 5, 2009
filing date -
Feb 6, 2008
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Abstract
A method of producing a Group II-VI compound semiconductor. The method involves generating a pulsed electrical discharge plasma between metallic electrodes in sulfur to produce a Group II-VI compound semiconductor. A method of producing a Group II-VI compound semiconductor phosphor using a pulsed electrical discharge plasma. A hexagonal crystal of Group II-VI compound semiconductor composed of a plurality of twin crystals.
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