Semiconductor device having wirings formed by damascene
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United States of America Patent
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-
Oct 1, 2013
Grant Date -
Aug 5, 2010
app pub date -
Apr 7, 2010
filing date -
Mar 20, 2006
priority date (Note) -
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Abstract
An insulating film is formed over a semiconductor substrate. A wiring trench formed in the insulating film reaches partway in a thickness direction of the insulating film. A via hole is disposed at an end of the wiring trench. A barrier metal film covers inner surfaces of the wiring trench and via hole. A bottom of the wiring trench and a sidewall of the via hole are connected via an inclined plane. A length of a portion of the inclined plane having an inclination angle range of 40° to 50° relative to a surface of the semiconductor substrate is equal to or shorter than a maximum size of a plan shape of the via hole, in a cross section which is parallel to a longitudinal direction of the wiring trench, passes a center of the via hole and perpendicular to the surface of the semiconductor surface.
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