Zirconium and hafnium boride alloy templates on silicon for nitride integration applications
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United States of America Patent
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Oct 1, 2013
Grant Date -
Aug 4, 2011
app pub date -
Apr 12, 2011
filing date -
Jan 4, 2007
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Abstract
Semiconductor structures are provided comprising a substrate and a epitaxial layer formed over the substrate, wherein the epitaxial layer comprises B; and one or more element selected from the group consisting of Zr, Hf and Al and has a thickness greater than 50 nm. Further, methods for integrating Group III nitrides onto a substrate comprising, forming an epitaxial buffer layer of a diboride of Zr, Hf, Al, or mixtures thereof, over a substrate; and forming a Group III nitride layer over the buffer layer, are provided which serve to thermally decouple the buffer layer from the underlying substrate, thereby greatly reducing the strain induced in the semiconductor structures upon fabrication and/or operation.
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