Method of controlled lateral etching
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United States of America Patent
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Sep 24, 2013
Grant Date -
Mar 21, 2013
app pub date -
Nov 23, 2011
filing date -
Sep 21, 2011
priority date (Note) -
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Abstract
A method of controlled lateral etching is disclosed. In one embodiment, the method may comprise: forming on a first material layer, which comprises a protruding structure, a second material layer; forming spacers on outer surfaces of the second material layer opposite to vertical surfaces of the protruding structure; forming a third material layer on surfaces of the second material layer and the spacers; forming on the third material layer a mask layer which extends in a direction lateral to a surface of the first material layer; and laterally etching portions of the respective layers arranged on the vertical surfaces of the protruding structure.
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