Formation of photovoltaic absorber layers on foil substrates

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United States of America Patent

PATENT NO 8541048
SERIAL NO

12437539

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Abstract

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An absorber layer of a photovoltaic device may be formed on an aluminum or metallized polymer foil substrate. A nascent absorber layer containing one or more elements of group IB and one or more elements of group IIIA is formed on the substrate. The nascent absorber layer and/or substrate is then rapidly heated from an ambient temperature to an average plateau temperature range of between about 200° C. and about 600° C. and maintained in the average plateau temperature range 1 to 30 minutes after which the temperature is reduced.

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Patent Owner(s)

Patent OwnerAddress
AERIS CAPITAL SUSTAINABLE IP LTDP O BOX 715 C/O AVALON MANAGEMENT LIMITED LANDMARK SQUARE 1ST FLOOR 64 EARTH CLOSE GRAND CAYMAN KY1-1107

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bollman, Brent San Jose, US 21 260
Leidholm, Craig Sunnyvale, US 47 1116

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